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VMM 90-09F
Dual Power
HiPerFET TM Module
Phaseleg Configuration
8
3
V DSS = 900 V
I D25 = 85 A
R DS(on) = 76 m ?
MOSFET T1 + T2
9
11
10
6
7
NTC
1
2
Features
? HiPerFET TM technology
Symbol
Conditions
Maximum Ratings
– low R DSon
V DSS
V GS
I D25
I D80
I F25
I F80
T VJ = 25°C to 150°C
T C = 25°C
T C = 80°C
(diode) T C = 25°C
(diode) T C = 80°C
900
±20
85
65
85
65
V
V
A
A
A
A
– unclamped inductive switching (UIS)
capability
– dv/dt ruggedness
– fast intrinsic reverse diode
– low gate charge
? thermistor
for internal temperature measurement
? package
– low inductive current path
– screw connection to high current
main terminals
Symbol
R DSon
Conditions
V GS = 10 V; I D = I D80
Characteristic Values
(T VJ = 25 ° C, unless otherwise specified)
min. typ. max.
76 m ?
– use of non interchangeable
connectors for auxiliary terminals
possible
– Kelvin source terminals for easy drive
– isolated DCB ceramic base plate
V GSth
I DSS
I GSS
Q g
Q gs
V DS = 20 V; I D = 30 mA
V DS = 0.8 ? V DSS ; V GS = 0 V; T VJ = 25°C
T VJ = 125°C
V GS = ±20 V; V DS = 0 V
V GS = 10 V; V DS = 450 V; I D = 50 A
3
1.5
960
225
5
0.4
1
V
mA
mA
μA
nC
nC
Applications
? converters with high power density
and high switching speed for
– power supplies
– induction heating
Q gd
430
nC
t d(on)
t r
t d(off)
t f
V GS = 10 V; V DS = 0.5 ? V DSS ;
I D = I D80 ; R G = 0.47 ?
150
180
330
140
ns
ns
ns
ns
V F
t rr
(diode) I F = 90 A; V GS = 0 V
(diode) I F = 90 A; -di/dt = 400 A/μs; V DS = 100 V
1.1
250
1.6
V
ns
R thJC
0.08 K/W
R thJS
with heat transfer paste
0.12
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
? 2005 IXYS All rights reserved
1-4
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